BAS21_ND87Z【PDF 1/3 页】DIODE GEN PURP 250V 200MA SOT23

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BAS21

General Purpose High Voltage Diode

Sourced from Process 1H. See MMBD1401 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol Parameter Value Units

WIV

Working Inverse Voltage 250 V

Average Rectified Current 200 mA

DC Forward Current 600 mA

Recurrent Peak Forward Current 700 mA

if(surge)

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

1.0

2.0

Tstg

Storage Temperature Range -55 to +150

°C

Operating Junction Temperature 150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

BAS21

Total Device Dissipation

Derate above 25°C

2.8

mW/°C

350

RθJA

Thermal Resistance, Junction to Ambient 357

°C/W

?2002 Fairchild Semiconductor Corporation BAS21. Rev. A1

SOT-23

A82.

2 NC

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